| Abstract: | The effect of non-stoichiometry of gallium arsenide melt composition on the recombination activity of dislocations in undoped semi-insulating GaAs crystals is studied and analyzed. It is shown that the deviation from the stoichiometric melt composition is one of the major factors affecting the recombination activity of dislocations in undoped semi-insulating GaAs crystals. namely: the recombination activity of dislocations is increased when the arsenic-rich melt is used, and, on the contrary, is decreased when the gallium-rich melt is used. The regularities observed are explained by the complex processes of interaction of dislocations with the non-stoichiometry-induced intrinsic point defects. |
