Growth of bubble-free Ti-doped Al2O3 single crystal by the czochralski method

The behaviour of bubble entrapment in Ti-doped Al₂O₃ single crystals grown by the Czochralski method was studied from the view point of crystal growth conditions such as the crystal rotation rate and kinds of growth atmosphere. The entrapment of bubbles was not correlated with the shape of solid-liquid interface dependent on crystal rotation rate. We found that the use fo He atmosphere, instead of the conventional atmosphere such as Ar, suppresses the formation of bubbles.