| Abstract: | The results, obtained from U-implanted silicon crystals, are presented. Disclocation-free Si-wafers (200 μm thick) were implanted with 16 MeV/n U-ions using Darmstadt accelerator. The applied dose was of 4.4 · 1012 i/cm2. During implantation the crystal was covered by 2 mm thick copper mask with a circular hole of 8 mm diameter. We present the results which were obtained 4 years after performing the implantation. During this time the crystal was kept at the room temperature. Various X-ray diffraction methods have been applied to characterize the state of crystal perfection. |
