Theory of 1f noise in medium and far infrared photodetectors |
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| Institution: | 1. Key Laboratory of Environment Remediation and Ecological Health, Ministry of Education, College of Environmental and Resource Sciences, Zhejiang University, 866 Yuhangtang Road, Hangzhou 310058, PR China;2. ZJU-Hangzhou Global Scientific and Technological Innovation Center, 311200 Hangzhou, PR China;3. Shanghai Municipal Engineering Design Institute Group Co., Ltd, 901 North Zhongshan (2nd) Road, Shanghai 200092, PR China;4. Christopher Ingold Laboratories, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, United Kingdom;1. Department of Physics, Indian Institute of Information Technology, Design and Manufacturing, Kancheepuram, Off Vandalur-Kelambakkam Road, Chennai, 600127, India;2. Division of Physics, School of Advanced Sciences, Vellore Institute of Technology (VIT), Vandalur - Kelambakkam Road, Chennai, 600127, India;3. Department of Physics, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do, 461701, Republic of Korea;1. School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;2. Research Center for Materials Science and Engineering, Jilin Institute of Chemical Technology, Jilin 132000, China;3. Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun 130022, China;1. Institute of Physics, Chemnitz University of Technology, Reichenhainer Str. 70, 09126, Chemnitz, Germany;2. Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126 Chemnitz, Germany |
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| Abstract: | The present report is denoted to the theory of infrared photodiode low frequency noise based on homogeneous and nondegenerate semiconductors. The results of the theoretical calculation are extended to include photodiodes made of elementary semiconductors, as well as of chalcogenides and solid solutions band structures which are described through a two-band Kane model. The kinetic equations of Boltzmann for the system of electrons and phonons are used to calculate the spectral density noise. In the calculation, only the electron-phonon interactions have been taken into consideration. For low frequency noise spectrum an expression is obtained which is well matched with the experimental formula Hooge. |
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