Ion channeling study of defects in CuInTe2 single crystals

Ion channeling spectra of as-grown CuInTe₂ single crystals are measured using a 2 MeV ⁴He⁺ analysing beam. It is found that the measured minimum yields cannot be explained within a model of randomly distributed non-interacting point defects caused by deviations from ideal stoichiometry. A model with extended defects due to vacancy clustering and dislocation formation is proposed to interprete the experimental results.