On the Reasons Leading to an Appearance of Correlated and Anticorrelated Dependences of the Minority Carrier Lifetime on the Dislocation Density in Undoped Semi-Insulating “Stoichiometric” GaAs Crystals

It is shown that in undoped semi-insulating GaAs crystals grown under the stoichiometric conditions both correlated and anticorrelated dependences of the minority carrier lifetime τ on the dislocation density N_d could be observed. The above-pointed effect is connected with a slight excess of Ga atoms (then the correlated dependence τ vs Nd appears) or of As atoms (then the anticorrelated dependence τ vs N_d appears) which inevitably exists even in “stoichiometric” GaAs crystals (i.e. in GaAs crystals of “stoichiometric” composition).