Optical characterization of radiative semiconductors |
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| Affiliation: | 1. University of Parma, Parco Area delle Scienze 7/A, 43124 Parma, Italy;2. Elettra Sincrotrone di Trieste, s.s. 14 km 163.5, 34149 Trieste, Italy;3. CNR-IMM Agrate Unit, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy;4. University of Nova Gorica, Vipavska Cesta 11c, Ajdovˇsˇcina, 5270, Slovenia;5. Helmholtz-Zentrum Berlin fu¨r Materialien und Energie, Albert-Einstein-Str. 15, 12489 Berlin, Germany;1. Materials Science, Engineering, and Commercialization Program, Texas State University, 601 University Dr., San Marcos, Texas 78666, USA;2. Department of Physics, Texas State University, 601 University Dr., San Marcos, Texas 78666, USA;3. National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, CO 80401 USA;4. Department of Physics and Astronomy, The University of Toledo, McMaster Hall, Room 2017, Toledo, OH 43606, USA;1. Laboratory for Applied Physics, Department of Computer Science, University of Verona, Verona 37134, Italy;2. Micro-Raman Laboratory, Department of Computer Science, University of Verona, Verona 37134, Italy;3. Department of Physics and Astronomy “G. Galilei”, University of Padova, Via F. Marzolo 8, 35131 Padova, Italy |
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| Abstract: | This paper describes a direct photoluminescent method of characterizing high quantum efficiency semiconductors in terms of an “effective absorption coefficient” which is a function of the absorption coefficient and of the diffusion length of excess minority carriers injected optically.The results obtained by this method indicate that the diffusion lengths in unintentionally doped (pure) and n and p-type GaAs can be in excess of 0.03 cm at room temperature, and that surface and bulk radiation processes in these materials can be separated. |
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