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Some aspects of doping mechanism in Polyschwefelnitrid (SN)x
Authors:A Kawaguchi  S Isoda  J Petermann  K Katayama
Institution:(1) Universität des Saarlandes, Fachbereich 12.1, FRG;(2) Werkstoffphysik und Werkstofftechnologie, Saarbrücken, FRG;(3) Institute for Chemical Research, Kyoto University, Uji, Kyoto, Japan;(4) Present address: Kunststoffverarbeitung, Technische Universität Hamburg-Harburg, Hamburg, FRG
Abstract:(SN)x crystals doped with iodine atoms showed ten or more additional diffuse streaks perpendicular to the b*-axis, appearing between the layer lines of the electron diffraction pattern of pristine (SN)x. However, only four of these were observed in the X ray diffraction pattern. These four diffuse streaks suggest that the iodine atoms are structured with a one-dimensional order. The extra diffuse streaks can be explained by the double diffraction between the four streaks and the spotty diffractions of (SN)x. The double diffraction results from the microfibrillar nature of the (SN)x. From X-ray microanalysis of doped (SN)x, the iodine content in the specimen was found to change mainly in the direction along the chain axis and almost constant in the direction perpendicular to it. The distribution of iodine atoms indicates that the dopants diffuse preferentially along the molecular axis through disordered domains between fine fibrils comprised in (SN)x crystals. Then the dopants are settled in the narrow disordered domains and give the extra streaked diffraction.
Keywords:Polysulphurnitride  halogen doping  multiple diffraction  grain boundary
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