Influence of the surface termination on the electrochemical properties of boron-doped diamond (BDD) interfaces |
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| Institution: | 1. Laboratoire d’Electrochimie et de Physicochimie des Matériaux et des Interfaces (LEPMI), CNRS-INPG-UJF, 1130 rue de la piscine, BP 75, 38402 St. Martin d’Hères, Cedex, France;2. Institut de Recherche Interdisciplinaire (IRI), USR CNRS 3078 and Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN),UMR CNRS-8520, Cité Scientifique, Avenue Poincaré – BP 60069, 59652 Villeneuve d’Ascq, France |
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| Abstract: | The paper reports on the electrochemical study of heavily boron-doped diamond (BDD) in aqueous media. Cyclic voltammetry and Mott-Schottky analysis were used to evaluate the influence of the surface termination on the electrochemical properties of BDD electrodes. The behavior of aminated BDD (NH2–BDD) interfaces, prepared from hydrogen-terminated BDD using NH3 plasma and from photochemically oxidized BDD (HO–BDD) using 3-aminopropyltrimethoxysilane (APTMES), are investigated and compared to those of H–BDD and HO–BDD. While H–BDD and HO–BDD electrodes show classical semiconductor behavior, amine-terminated BDD interfaces exhibit metallic behavior at pH < 10 and a semiconductor behavior at more basic pH. |
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