Growth Mechanism and Characterization of Single-crystalline Ga-doped SnO2 Nanowires and Self-organized SnO2/Ga2O3 Heterogeneous Microcomb Structures

Single-crystalline Ga-doped SnO2 nanowires and SnO2:Ga2O3 heterogeneous microcombs were synthesized by a simple one-step thermal evaporation and condensation method. They were characterized by means of X-ray powder diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). FE-SEM images showed that the products consisted of nanowires and microcombs that represent a novel morphology. XRD, SAED and EDS indicated that they were single-crystalline tetragonal SnO2. The influence of experimental conditions on the morphologies of the products is discussed. The morphology of the product showed a ribbon-like stem and nanoribbon array aligned evenly along one or both side of the nanoribbon. It was found that many Ga2O3 nanoparticles deposited on the surface of the microcombs. The major core nanoribbon grew mainly along the 110 direction and the self-organized branching nanoribbons grew epitaxially along 1110 or 1110 orientation from the (110) plane of the stem. A growth process was proposed for interpreting the growth of these remarkable SnO2:Ga2O3 heterogeneous microcombs. Due to the heavy doping of Ga, the emission peak in photoluminescence spectra has red-shifted as well as broadened significantly.