| 绝缘层修饰对喷墨打印有机场效应晶体管形貌和性能的影响 |
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| 引用本文： | 张国成,陈惠鹏,郭太良. 绝缘层修饰对喷墨打印有机场效应晶体管形貌和性能的影响[J]. 发光学报, 2017, 38(2): 194-200. DOI: 10.3788/fgxb20173802.0194 |
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| 作者姓名： | 张国成 陈惠鹏 郭太良 |
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| 作者单位： | 1. 福州大学 平板显示技术国家地方联合工程实验室, 福建 福州 350102;2. 福建工程学院 信息科学与工程学院, 福建 福州 350108 |
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| 基金项目： | 国家重点研发计划，国家自然科学基金，福建省自然科学基金，福建省中青年教师教育科研项目，National Key Research and Development Plan，National Natural Science Foundation of China，Natural Science Foundation of Fujian Province，Young Teacher Education Research Project of Fujian Province |
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| 摘 要： | 通过对OTFT绝缘层SiO_2表面分别采用十八烷基三氯硅烷(OTS)处理和原子层沉积薄层氧化铝的修饰方式,制备了喷墨打印有机薄膜晶体管并研究了修饰前后绝缘层的表面形貌、接触角及有源层的物相结构。虽然绝缘层的表面形貌在修饰前后变化不大,但是表面接触角和打印后有源层的物相结构有较大差别。OTS处理和沉积氧化铝修饰后,器件的迁移率比修饰前分别增大了4倍和9倍,而开关比则分别增大了1个和4个数量级。修饰后的最大迁移率可达0.35 cm~2/(V·s),开关比可达6.0×10~6。
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| 关 键 词： | 有机薄膜晶体管 喷墨打印 表面修饰 原子层沉积 |
| 收稿时间： | 2016-08-08 |
Impact of The Modification of Dielectric Layers on The Morphlogy and Device Performance of Inkjet-printed OFET |
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| ZHANG Guo-cheng,CHEN Hui-peng,GUO Tai-liang. Impact of The Modification of Dielectric Layers on The Morphlogy and Device Performance of Inkjet-printed OFET[J]. Chinese Journal of Luminescence, 2017, 38(2): 194-200. DOI: 10.3788/fgxb20173802.0194 |
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| Authors: | ZHANG Guo-cheng CHEN Hui-peng GUO Tai-liang |
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| Affiliation: | 1. Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350102, China;2. College of Information Science and Engineering, Fujian University of Technology, Fuzhou 350108, China |
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| Abstract: | OTFT devices were fabricated through inkjet printing active layer on SiO2 dielectric.To improve the device performance,SiO2 layer was modified with octadecyltrichlorosilane (OTS) or a thin layer of Al2O3 (1 nm) by atomic layer deposition.The surface morphology,contact angle of PDVT-8 solution on the dielectric layer,and the crystalline of the inkjet printing active layers were examined.The surface morphology of the modified dielectric layer is slightly various with SiO2 layer,while the contact angle and crystalline of the inkjet printing active layer change significantly.For OTS-treated dielectric layer and ALD Al2 O3-treated dielectric layer,the mobility increases 4 times and 9 times,while the on/off current ratio increases 1 order of magnitude and 4 orders of magnitude,respectively,The maximum value of mobility and the on/off current ratio are 0.35 cm2/(V · s)and 6.0 × 106. |
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| Keywords: | OTFT inkjet printing surface modification ALD |
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