| Be掺杂对InGaAsN/GaAs量子阱性能的提高 |
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| 引用本文： | 霍大云,石震武,徐超,邓长威,陈晨,陈林森,王文新,彭长四.Be掺杂对InGaAsN/GaAs量子阱性能的提高[J].发光学报,2017,38(8). |
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| 作者姓名： | 霍大云 石震武 徐超 邓长威 陈晨 陈林森 王文新 彭长四 |
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| 作者单位： | 1. 苏州大学 光电信息科学与工程学院,苏州纳米科技协同创新中心,江苏 苏州 215006;苏州大学 江苏省先进光学技术重点实验室,教育部现代光学技术重点实验室,江苏 苏州 215006;2. 中国科学院物理研究所 北京凝聚态物理国家实验室,北京,100190 |
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| 基金项目： | 国家自然科学基金，江苏高校优势学科建设工程，科技部国际合作项目，江苏省高校自然科学研究重大项目，江苏省普通高校研究生科研创新计划(KYLX15_1252)资助项目 Supported by National Natural Science Foundation of China，Priority Academic Program Development of Jiangsu Higher Education Institutions，International Cooperation Project by MOST，Natural Science Research Project of Jiangsu Higher Education，Research Plan of Graduate Students in Jiangsu Province |
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| 摘 要： | InGaAsN/GaAs量子阱中进行铍(Be)元素重掺杂能显著提高其光学性质,并且发光波长发生了红移.X射线衍射摇摆曲线清楚地证实了铍掺杂抑制了InGaAsN(Be)/GaAs量子阱在退火过程中的应力释放.对比退火前,退火后的没有进行铍掺杂的量子阱样品的量子阱的X射线摇摆曲线衍射峰明显向GaAs衬底峰偏移;而对于掺铍的量子阱样品而言,这样的偏移要小很多.
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| 关 键 词： | 稀氮化物 分子束外延 量子阱 应变弛豫 X射线衍射 |
Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping |
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| HUO Da-yun,SHI Zhen-wu,XU Chao,DENG Chang-wei,CHEN Chen,CHEN Lin-sen,WANG Wen-xin,PENG Chang-si.Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping[J].Chinese Journal of Luminescence,2017,38(8). |
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| Authors: | HUO Da-yun SHI Zhen-wu XU Chao DENG Chang-wei CHEN Chen CHEN Lin-sen WANG Wen-xin PENG Chang-si |
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| Abstract: | Heavily doping beryllium in the InGaAsN/GaAs quantum well (QW) can improve the optical properties significantly, while the emission wavelength is red-shifted.The X-ray diffraction (XRD) rocking curves provide clear-cut evidence that the doping of Be suppresses the strain relaxation in InGaAsN(Be)/GaAs QW during thermal annealing.An obvious XRD rocking curve peak shift of no-Be QW diffraction towards GaAs substrate peak before and after annealing was observed, while the shift for the Be-doped QW was much smaller than undoped QW. |
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| Keywords: | dilute nitride molecular beam epitaxy quantum well strain relaxation X-ray diffraction |
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