高速光通讯面发射激光器的热分析及优化

垂直腔面发射激光器(VCSEL)已成为短距离数据通信传输系统的首选光源。热限制是VCSEL器件调制带宽进一步增加的一个主要的制约因素。本文基于有限元分析的方法对影响980 nm-VCSEL器件有源区温度的参数,如驱动电流、氧化孔径尺寸、氧化层材料等做了比较分析,还数值分析了二元系Ga As/Al As材料DBR用于高速低能耗VCSEL器件的优势,为绿色光子器件设计提供优化思路。

Thermal Analysis and Structure Optimization of High-speed Optical Communication-VCSEL

Vertical-cavity surface-emitting lasers ( VCSELs) have already become the first choice of light sources for short-reach optical interconnects. As the continues growth of optical interconnects used for data center, there is an urgent need for high-speed VCSEL devices which can support high data bandwidth requirement. This paper performs a comparative thermal analysis of 980 nm VCSELs based on the finite element method. Parameters which can influence the active region temperature are studied in this work including bias current, oxide aperture diameters, and material used for DBRs. Also, the improvement by using binary GaAs/AlAs Bottom-DBR is numerable studied by ex-tracted thermal resistance form thermal simulation. The improvement in thermal performance makes this strategy useful for next generation green photonic device design.