Study of the local micro-structure and magnetic and transport properties of CrxGe1−x thin films |
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Authors: | Y.C. Hu W.X. Gao Q. Zhang L. Ma C.M. Zhen G.D. Tang |
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Affiliation: | Department of Physics and Advanced Thin Films Laboratory, Heibei Normal University, Shijiazhuang 050016, China |
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Abstract: | The local micro-structure as well as the magnetic and transport properties of CrxGe1−x films prepared by means of magnetron sputtering have been investigated. Structural analysis shows that Cr atoms are situated in substitutional sites in the Ge lattice. Electrical transport properties indicate that Cr introduces a shallow acceptor level at 0.016 eV from the valence band implying Cr substituting for Ge. The low temperature ferromagnetism observed in the films is mediated mainly by ferromagnetic superexchange interactions between diluted Cr ions. |
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Keywords: | Diluted magnetic semiconductor Microstructure Extended X-ray absorption fine structure (EXAFS) Magnetic property |
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