Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films |
| |
Authors: | L. Chen |
| |
Affiliation: | State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China |
| |
Abstract: | We present a study of magnetic anisotropy by using magneto-transport and direct magnetization measurements on tensile strained (Ga,Mn)As films. The magnetic easy axis of the films is in-plane at low temperatures, while the easy axis flips to out-of-plane when temperature is raised or hole concentration is increased. This easy axis reorientation is explained qualitatively in a simple physical picture by Zener’s p-d model. In addition, the magneto-crystalline anisotropic resistance was also investigated experimentally and theoretically based on the single magnetic domain model. The dependence of sheet resistance on the angle between the magnetic field and [1 0 0] direction was measured. It is found that the magnetization vector M in the single-domain state deviates from the external magnetic field H direction at low magnetic field, while for high magnetic field, M continuously moves following the field direction, which leads to different resistivity function behaviors. |
| |
Keywords: | Magnetic semiconductor Magnetic anisotropy Magneto-transport phenomenon Molecular-beam epitaxy |
本文献已被 ScienceDirect 等数据库收录! |
|