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微波场效应管Ⅰ—Ⅴ特性模型研究
引用本文:张伟平,沈楚玉.微波场效应管Ⅰ—Ⅴ特性模型研究[J].微波学报,1995,11(3):207-214.
作者姓名:张伟平  沈楚玉
作者单位:东南大学毫米波国家重点实验室 南京210096 (张伟平),东南大学毫米波国家重点实验室 南京210096(沈楚玉)
摘    要:本文对微波场效应管Ⅰ—Ⅴ特性模型进行了研究,分析比较了八种常用模型的优缺点,它可为微波电路的设计提供一个实用的参考依据.在模型参数提取中,我们采用了一种新算法,先应用一个基于主成份灵敏度分析的空间坐标变换,然后采用Levenberg-Marquardt算法进行优化拟合.实际计算表明,此法能够快速、精确地提取模型参数.

关 键 词:场效应管  Ⅰ-Ⅴ特性模型  主成份灵敏度分析  参数提取

A study of I - V Characteristic Modeling for Microwave FETs
Zhang Weiping. Shen Chuyu State Key Lab. of Millimteter Wates,Southeast University,Nanjing,China.A study of I - V Characteristic Modeling for Microwave FETs[J].Journal of Microwaves,1995,11(3):207-214.
Authors:Zhang Weiping Shen Chuyu State Key Lab of Millimteter Wates  Southeast University  Nanjing  China
Institution:Zhang Weiping. Shen Chuyu State Key Lab. of Millimteter Wates,Southeast University,Nanjing 210095,China)
Abstract:In this paper, a new algorithm is introduced to build microwave FET large signal model. Using a principal component sensitivity analysis procedure, this algorithm transforms the axes from model parameters to the uncorrelated principal component axes, then carries on I - V characteristic curve fitting by the L-M method. The results show that this algorithm is very fast and accurate. Using this algorithm, we develop a program for extracting model parameters. Eight large signal FET models have been considered and have been compared for four different cases. They can provide the microwave circuit designers with a practical benchmark.
Keywords:FET  I V characteristic model  Principal component sensitivity analysis  Parameter extracting  
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