BSIM4和ULTRA-BULK模型对称性和连续性的检验

以对比的形式用GUMMEL对称测试电路的模拟结果检验了伯克利大学的BSIM4和北京大学的ULTRA-BULK两个CMOS器件模型的对称性和连续性特性。SPICE模拟结果表明:工业标准模型BSIM4在电荷、电流高阶导数以及电容等的连续性和对称性上具有一系列的缺陷,而最新发展的基于表面势的MOSFET解析模型ULTRA-BULK却表现出必需的连续性和对称性。既然这些属性对于模拟电路和射频电路设计都是非常重要的,那么新一代CMOS模型采用基于表面势的各种MOSFET解析模型将是必然的发展。

Benchmark Tests on Symmetry and Continuity Characteristics between BSIM4 and ULTRA-BULK

This paper presents the benchmark test results on the symmetry and continuity characteristics between BSIM4 from Berkeley and ULTRA-BULK from Peking University. It is shown that the industry standard model BSIM4 has a series of the shortcomings of the continuity and symmetry, such as the charge, high-order current derivatives, and the trans-capacitances while the latest advanced surface-potential based MOSFET compact model, ULTRA-BULK, demonstrates all necessary continuity and symmetry characteristics, which are very important for Analog and RF circuit design. It is the necessary trend for the next generation compact model of CMOS to adopt the potential-based approach.