New metal-rich mixed chalcogenides with an intergrowth structure: Ni5.68SiSe2, Ni5.46GeSe2, and Ni5.42GeTe2 |
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| Authors: | A. A. Isaeva A. I. Baranov Th. Doert M. Ruck V. A. Kulbachinskii R. A. Lunin B. A. Popovkin |
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| Affiliation: | (1) Department of Materials Science, M. V. Lomonosov Moscow State University, 1 Leninskie Gory, 119992 Moscow, Russian Federation;(2) Max Planck Institute for Chemical Physics of Solids, Noethnitzer Strasse 40, 01187 Dresden, Germany;(3) Institute of Inorganic Chemistry, Dresden University of Technology, Helmholtzstrasse 10, D-01062 Dresden, Germany;(4) Department of Physics, M. V. Lomonosov Moscow State University, 1 Leninskie Gory, 119992 Moscow, Russian Federation;(5) Department of Chemistry, M. V. Lomonosov Moscow State University, 1 Leninskie Gory, 119992 Moscow, Russian Federation |
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| Abstract: | New metal-rich mixed nickel-silicon and nickel-germanium chalcogenides, Ni5.68SiSe2, Ni5.46GeSe2, and Ni5.42GeTe2, were synthesized by high-temperature ceramic techniques. The X-ray diffraction study of single crystals grown from a molten flux revealed that the compounds are isostructural and crystallize in the tetragonal system (space group I4/mmm, Z = 2). These compounds are the first members of the family of M7−δEX2-type (M = Ni or Pd; E = Sn or Sb; X is chalcogen) intergrowth structures containing “light” p elements E. Resistivity measurements on pressed textured pellets showed that both selenides are anisotropic metallic conductors in the directions parallel and perpendicular to the heterometallic bond systems. The geometric criteria of stability of the intergrowth structure type under consideration are discussed. Dedicated to Academician G. A. Abakumov on the occasion of his 70th birthday. Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 9, pp. 1632–1638, September, 2007. |
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| Keywords: | nickel germanium silicon metal-rich chalcogenides intergrowth structures crystal structure anisotropy of conductivity |
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