聚3-氯噻吩修饰CdSe纳米棒复合膜电极光电化学性能研究

采用水热法制备了具有闪锌矿和纤维锌矿结构的CdSe纳米棒. 纳米棒直径约为100 nm, 长度约为300 nm. 当外加电极电势为-0.6 V 时, 经聚3-氯噻吩[Poly(3-chlorothiophene), P3CT]修饰的CdSe纳米棒具有最大光电流, 并且CdSe/P3CT复合膜电极最高光电转换效率(IPCE)为13.5%, 低于CdSe纳米棒膜电极17.7%的最高IPCE. CdSe/P3CT复合膜电极中存在p-n异质结, p-n异质结的存在使得CdSe/P3CT复合膜电极在长波区(>410 nm)的IPCE整体高于CdSe纳米棒薄膜电极的IPCE.

Photoelectrochemical Studies of P3CT Modified CdSe Nanorod Composite Film Electrode

CdSe nanorods(zinc blende and wulitize) were prepared via hydrothermal method.The CdSe nanorod was formed with a diameter about 100 nm and a length about 300 nm.The photoelectrochemical pro-perties of the CdSe nanorods/P3CT composite film electrode were investigated.The results show that the maximum value of photocurrent appeared at an electrode potential of-0.6 V.The maximum IPCE(13.5%) of the modified film electrode was lower than that of 17.7% CdSe nanorord film electrode.The p-n heterojunction was existed in the CdSe/P3CT composite film electrode.Because of the existence of p-n heterojunction,under certain condition the IPCE of P3CT modified CdSe nanorod was larger than that of CdSe film electrode in the whole long wavelength region(>410 nm).