| PSII技术中考虑靶表面二次电子发射的等离子体鞘层演变 |
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| 引用本文： | 童洪辉.PSII技术中考虑靶表面二次电子发射的等离子体鞘层演变[J].核聚变与等离子体物理,1995(3). |
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| 作者姓名： | 童洪辉 |
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| 作者单位： | 核工业西南物理研究院 |
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| 摘 要： | 本文建立了ＰＳＩＩ技术中靶表面有二次电子发射的等离子体鞘层演变平板模型。在某些简化下，对随时间变化的鞘层边界位置和速度作了计算。计算表明，靶表面二次电子发射对鞘层演变影响很小，可忽略不计，这跟实验是相符的。
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| 关 键 词： | 二次电子发射，鞘层演变 |
DEVELOPMENT OF THE PLASMA SHEATH WITH SECONDARY ELECTRON EMISSION IN PSII |
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| TONG Honghui.DEVELOPMENT OF THE PLASMA SHEATH WITH SECONDARY ELECTRON EMISSION IN PSII[J].Nuclear Fusion and Plasma Physics,1995(3). |
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| Authors: | TONG Honghui |
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| Abstract: | A planar plasma sheath model with secondary electron emission from the target surface has been setablished for the PSII. The change in sheath edge position and velocity with time are calculated with certain simplificaition. It is predicated that the effects of the secodary electron emission on the target surface for the expanded sheath will be little and so can be neglected. This is in agreement with the experimental result. |
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| Keywords: | Secondary electron emission Expanded sheath |
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