Formation of silicon carbide nanocrystals by high-temperature carbonization of porous silicon |
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Authors: | Yu. S. Nagornov B. M. Kostishko S. N. Mikov Sh. R. Atazhanov A. V. Zolotov E. S. Pchelintseva |
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Affiliation: | (1) Ul’yanovsk State University, ul. L. Tolstogo 42, Ul’yanovsk, 432700, Russia;(2) Samara State University, Samara, 443011, Russia |
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Abstract: | Based on X-ray diffraction analysis, Auger spectroscopy, and Raman scattering, it is shown that carbonization of porous silicon at temperatures of 1200–1300°C results in formation of silicon carbide nanocrystals 5–7 nm in size. The growth of 3C-SiC nanocrystals of fixed size d proceeds as follows. Silicon nanocrystals with d = 3–7 nm pass into the liquid phase, thereby effectively participating in the growth of silicon carbide. After the size of a crystallite has achieved a critical value determined by the equality of its melting point and environmental temperature, the crystallite solidifies and virtually ceases to grow. As a result, a nanocrystalline Si-SiC-amorphous SiC heterostructure is obtained. |
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