|
|||||
|
|
Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers |
|
| Authors: | Nevin N Naguib Jeffrey W Elam James Birrell Jian Wang David S Grierson Bernd Kabius Jon M Hiller Anirudha V Sumant Robert W Carpick Orlando Auciello John A Carlisle |
| Institution: | aMaterials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439, USA bEnergy Systems Division, Argonne National Laboratory, Argonne, IL 60439, USA cAdvanced Diamond Technologies Inc., Champaign, IL 61820, USA dDepartment of Engineering Physics, University of Wisconsin-Madison, Madison, WI 53706, USA |
| Abstract: | Extremely smooth (6 nm RMS roughness over 4 μm2), thin (100 nm), and continuous ultrananocrystalline diamond (UNCD) films were synthesized by microwave plasma chemical vapor deposition using a 10 nm tungsten (W) interlayer between the silicon substrate and the diamond film. These UNCD films possess a high content of sp3-bonded carbon. The W interlayer significantly increased the initial diamond nucleation density, thereby lowering the surface roughness, eliminating interfacial voids, and allowing thinner UNCD films to be grown. This structural optimization enhances the films’ properties and enables its integration with a wide variety of substrate materials. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |