COULOMB BLOCKADE OSCILLATIONS OF Si SINGLE-ELECTRON TRANSISTORS |
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Authors: | Wang Tai-hong Li Hong-wei Zhou Jun-ming |
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Affiliation: | Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China |
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Abstract: | Coulomb blockade oscillations of Si single-electron transistors, which are fabricated completely by the conventional photolithography technique, have been investigated. Most of the single-electron transistors clearly show Coulomb blockade oscillations and these oscillations can be periodic by applying negative voltages to the in-plane gates. A shift of the peak positions is observed at high temperatures. It is also found that the fluctuation of the peak spacing cannot be neglected. |
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Keywords: | single-electron tunnelling Coulomb blockade quantum dots |
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