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The Raman spectroscopy of neutron transmutation doping isotope Germanium nanocrystals embedded in SiO2 matrix
Authors:Youwen Hu  Tiecheng Lu  Shaobo Dun  Qiang Hu  Ningkang Huang  Songbao Zhang  Junlong Dai  Issai Shlimak  Qiangmin Wei
Institution:a Department of Physics, Sichuan University, Chengdu 610064, PR China
b Key Laboratory for Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, PR China
c International Center for Material Physics, Chinese Academy of Sciences, Shenyang 110015, PR China
d Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, PR China
e Department of Physics, Bar-Ilan University, Ramat-Gan 52900, Israel
f Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109, USA
Abstract:We have succeeded in doping arsenic (As) impurities into isotope germanium nanocrystals (nc-74Ge) uniformly dispersed in a SiO2 matrix by using the neutron transmutation doping (NTD) method. The samples’ inner structural transmutation is studied by combining Raman scattering, X-ray fluorescence (XRF), X-ray photoelectron spectroscopy (XPS) and Transmission electron microscope (TEM) methods. The Raman spectrum of the doped sample exhibits a relative intensity increase of the low frequency tail, blue shift of the main Raman peak (∼300 cm−1) and a high frequency tail, while the undoped sample does not. Together with the XRF, XPS and TEM, we believe that the relative intensity increase of the low frequency tail arises from an increase of amorphous 74Ge (a-74Ge) induced by the irradiation damage. The blue shift of the main Raman peak comes from the mismatch of the crystal lattice which arose from the As impurity introduction. And the high frequency tail is due to transmuted-impurities (As) in the nc-74Ge which was introduced by NTD.
Keywords:75  50  Kj
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