Magnetoresistance effect in a hybrid ferromagnetic/semiconductor nanostructure |
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Authors: | Mao-Wang Lu |
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Institution: | Department of Physics, Beijing Normal University, Beijing 100875, People’s Republic of China |
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Abstract: | We propose a Magnetoresistance device in a magnetically modulated two-dimensional electron gas, which can be realized experimentally by the deposition of two parallel ferromagnetic strips on the top and bottom of a semiconductor heterostructure. It is shown that there exists a significant transmission difference for electrons through the parallel and antiparallel magnetization configurations of such a device, which leads to a considerable magnetoresistance effect. It is also shown that the magnetoresistance ratio of the device depends greatly on the magnetic strength difference in the two delta barriers of the system. |
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Keywords: | 73 40 -c 75 75 +a 72 20 -i 73 23 -b |
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