Electrical properties and stability of Tb-doped zinc oxide-based nonlinear resistors |
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Authors: | C.-W. Nahm |
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Affiliation: | Department of Electrical Engineering, Dongeui University, Busan 614-714, Republic of Korea |
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Abstract: | The microstructure, electric field-current density (E-J), capacitance-voltage (C-V), and stability characteristics of Zn-Pr-Co-Cr-Tb oxide-based nonlinear resistors were investigated for different Tb4O7 amounts. It increased in the range of 8.9-42.0 in the nonlinear coefficient and in the range of 1026-6514 V/cm in the breakdown field with increasing Tb4O7 amount. As Tb4O7 amount increased, the donor density decreased in the range of 1.23×1018-0.70×1018/cm3, whereas the barrier height at grain boundaries increased in the range of 0.73-0.93 eV. A good stability was obtained in the range of 0.25-0.5 mol% in Tb4O7 amount. |
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Keywords: | 72.20.Ht 81.05.Je 81.20.Ev |
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