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Effect of growth interruption time on the quality of InAs/GaSb type-II superlattice grown by molecular beam epitaxy
Authors:LIU Zhaojun  ZHU Lianqing  ZHENG Xiantong  LU Lidan  ZHANG Dongliang and LIU Yuan
Institution:School of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China,Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China,Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China,Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China,Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China and Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China
Abstract:
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