LEED investigation of germanium surfaces cleaned by sublimation of sulphide films; structural transitions on clean Ge(110) surface |
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Authors: | BZ Olshanetsky SM Repinsky AA Shklyaev |
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Institution: | Institute of Semiconductor Physics, Academy of Sciences of the USSR, Novosibirsk 630090, USSR |
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Abstract: | Sublimation of deposited germanium sulphide films at the temperatures as low as 350°C results in the appearance of LEED patterns of clean surfaces of germanium. In the interface between Ge(111) or Ge(110) and germanium sulphide, ordered structures are observed, namely Ge(111)?(2 × 1)S and Ge(110)?(10 × 5)S. The conclusion about the structure of the Ge(100) germanium sulphide interface cannot be made unambiguously. The structures of clean Ge(110) surfaces are described. The annealing of clean surfaces of Ge(110) at different temperatures leads to the formation of one of two possible surface structures. After annealing at temperatures below 380°C and above 430°C the Ge(110)?c(8 × 10) clean superstructure is observed. After annealing at temperatures from 380 up to 430°C the surface (110) is rearranged in vicinal planes of the (17 15 1) type with the (2 × 1) superstructure. These structures undergo reversible transitions from one to another at temperatures of about 380 and 430°C. |
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