Electronic and optical parameters of an oxygen-related center in Zn-Te |
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Authors: | B Katircioglu JL Pautrat |
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Institution: | 1. Centre d''Etudes Nucléaires de Grenoble, Département de Recherche Fondamentale, Section de Physique du Solide, 85 X, 38041 Grenoble Cedex,France |
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Abstract: | An electron trapping center (Ec ? 0.44 eV) has been characterized by the photocapacitance technique. This center appears in oxygen contaminated crystals after ion implantation and annealing in Zn vapour. It has also been created by oxygen implantation in oxygen-free crystals. This center might result of an OTe-D+ associate. |
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