Surface state excitons in semiconductors |
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Authors: | R. Del Sole E. Tosatti |
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Affiliation: | Istituto di Fisica, Università di Roma, Rome, Italy |
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Abstract: | We calculate binding energies and wave-functions of surface state excitons. Our approach is based on the effective mass approximation, and assumes a small but finite surface state penetration depth. Central cell corrections are included. We obtain binding energies in the tenth of eV range, in agreement with recent observations on GaAs (110) and Si (111) 7 × 7, for surface masses of order unity. |
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