Spin-dependent photoconductivity in n-type and p-type amorphous silicon |
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Authors: | I. Solomon D. Biegelsen J.C. Knights |
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Affiliation: | Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, 91128 Palaiseau Cédex, France;Xerox Palo Alto Research Center, Palo Alto, CA 94304, U.S.A. |
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Abstract: | It is found that, as in crystalline silicon, the photoconductivity in amorphous silicon prepared by glow discharge is strongly spin-dependent. In this material, the position of the Fermi level can be smoothly varied by phosphorous or boron doping and the magnitude of the spin-dependent recombination has been measured as a function of the doping: it is found to have a large maximum when the material is intrinsic. The similarities with the spin-dependent effects in crystalline and dislocation silicon suggest that the recombination process in amorphous silicon is the same as in the crystalline material and that dislocation-like centres are responsible for the spin-dependent recombination properties in both materials. |
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