非晶含氢碳膜的氧等离子体刻蚀性能研究

用苯作气源，采用电子回旋共振等离子体增强化学气相沉积方法制备了非晶含氢碳膜，并在该系统上用氧等离子体对这些碳膜进行了刻蚀性能的研究.实验中，测量了碳膜在不同氧压强、流量和微波功率下的刻蚀速率，研究了膜的沉积速率与它的刻蚀速率之间的关系.结果表明，膜的刻蚀速率与膜的生长条件密切相关；在低沉积速率下生长的非晶碳膜的刻蚀率低于常用的Novolak光刻胶.这种碳膜具有较强的耐刻蚀性能，可以用作微电子器件制造中的掩膜材料.关键词：

ETCHING PROPERTIES OF AMORPHOUS HYDROGENATED CARBON FILMS IN A MULTIPOLE ELECTRON CYCLOTRON RESONANCE OXYGEN PLASMA SYSTEM

The etching properties of amorphous hydrogenated carbon films deposited from benzene vapor in a multipole electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition system have been investigated.Etch rates of these carbon films as a function of the process variables,includ-ing gas pressure and microwave power were measured,and compared with other resist materials.The results show that the film has high etching resistance against oxygen,and etch rate of the film not only closely correlated with etching process parameters,but also with the deposition conditions.This film could be used as a resist in dry etching process.