| 衬底负偏压对Ni-Mn-Ga形状记忆薄膜成分及形貌的影响 |
| |
| 引用本文： | 杨利斌,柴跃生,张敏刚,陈峰华,张凯.衬底负偏压对Ni-Mn-Ga形状记忆薄膜成分及形貌的影响[J].电子元件与材料,2011,30(9):21-23,30. |
| |
| 作者姓名： | 杨利斌 柴跃生 张敏刚 陈峰华 张凯 |
| |
| 作者单位： | 1. 太原科技大学,山西太原 030024;山西晋城泽州二中,山西晋域048002
2. 太原科技大学,山西太原,030024 |
| |
| 基金项目： | 山西省自然科学基金资助项目(No.2010011032—1); 山西省研究生创新基金资助项目(No.20093096); 太原市大学生创新创业专题资助项目(No.100115154) |
| |
| 摘 要： | 采用能谱仪(EDS)和原子力显微镜(AFM)对不同衬底负偏压下射频磁控溅射法制备的Ni-Mn-Ga形状记忆薄膜进行了成分和形貌的分析.研究发现:当衬底负偏压在5～30V范围变化时,薄膜中的Ni含量随偏压的增加呈先减少后增加的趋势,在偏压为10V时,达到最小值52.84％(摩尔分数,下同).Ga含量的变化趋势恰好与Ni相...
|
| 关 键 词： | Ni-Mn-Ga 薄膜 衬底负偏压 |
Effects of substrate negative bias on the composition and morphology of Ni-Mn-Ga shape memory thin films |
| |
| YANG Libin,CHAI Yuesheng,ZHANG Mingang,CHEN Fenghua,ZHANG Kai.Effects of substrate negative bias on the composition and morphology of Ni-Mn-Ga shape memory thin films[J].Electronic Components & Materials,2011,30(9):21-23,30. |
| |
| Authors: | YANG Libin CHAI Yuesheng ZHANG Mingang CHEN Fenghua ZHANG Kai |
| |
| Institution: | YANG Libin1,2,CHAI Yuesheng1,ZHANG Mingang1,CHEN Fenghua1,ZHANG Kai1(1.Taiyuan University of Science and Technology,Taiyuan 030024,China,2.The Second Middle School of Zezhou,Jincheng 048002,Shanxi Province,China) |
| |
| Abstract: | Ni-Mn-Ga shape memory thin films were prepared by radio-frequency magnetron sputtering at different substrate negative bias.The effects of substrate negative bias on the composition and morphology of Ni-Mn-Ga thin films were studied through EDS and AFM.The results indicate that Ni contents of the films decrease first and then increase with the increasing of substrate negative bias in the range of 5-30 V.The minimum of Ni content is 52.84%(mole fraction,sililarly hereinafter) at 10 V.The varying trend of Ga ... |
| |
| Keywords: | Ni-Mn-Ga thin films substrate negative bias |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
