首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Interface and bulk controlled perovskite nanocrystal growth for high brightness light-emitting diodes [Invited]
Authors:Le liang  Xi Luo  Zhongming Luo  Dingjian Zhou  Baoxing Liu  Jincheng Huang  Jianfeng Zhang  Xulin Zhang  Ping Xu  Guijun Li
Abstract:Halide perovskites have attracted great attention due to their high color purity, high luminance yield, low non-radiative recombination rate, and solution processability. Although the external quantum efficiency of perovskite light-emitting diodes(Pe LEDs) is comparable with that of the organic light-emitting diodes(OLEDs) and quantum-dots light-emitting diodes(QLEDs), the brightness is still low compared with the traditional OLEDs and QLEDs. Herein, we demonstrate high brightness and high-efficiency Cs Pb Br3-based Pe LEDs using interface and bulk controlled nanocrystal growth of the perovskite emission layer. The interface engineering by ethanolamine and bulk engineering by polyethylene glycol led to highly crystallized and cubic-shaped perovskite nanocrystals with smooth and compact morphology. As a result, Pe LEDs with a high brightness of 64756 cd/m~2 and an external quantum efficiency of 13.4% have been achieved.
Keywords:
本文献已被 CNKI 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号