Resonant photoemission study ofK-derived valence-band states in K X C60 |
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Authors: | S. L. Molodtsov A. Gutiérrez E. Navas M. Domke G. Kaindl M. Merkel N. Nücker J. Fink V. P. Antropov O. K. Andersen O. Jepsen |
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Affiliation: | (1) Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, D-14195 Berlin, Germany;(2) Institut für Nukleare Festkörperphysik, Kernforschungszentrum Karlsruhe, Postfach 3640, D-76021 Karlsruhe, Germany;(3) Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;(4) Present address: Institute of Physics, St. Petersburg State University, 198904 St. Petersburg, Russia |
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Abstract: | The electronic structure of K-doped C60 was investigated by photoemission (PE) and X-ray absorption near-edge structure (XANES) studies at the C-1s and K-2p thresholds. In addition, information on the local K-derived partial density of states in superconducting K3C60 was obtained by resonant PE at the K-2p1/2 threshold. The experimental observations support a complete charge transfer from K to C60 and we clearly observe a finite density of states atEF. From resonant PE, occupied states with K-p, d character could be identified in the binding-energy region from 1.5 to 8 eV below, but not directly at the Fermi level. This partial-density-of-states structure agrees well with the results of our band-structure calculations based on the local-density approximation. |
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Keywords: | 36.40.+d 74.75.+t 79.60.– i |
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