Growth and structure of La3Zr0.5Ga5Si0.5O14 crystals |
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| Authors: | A. A. Pugacheva B. A. Maksimov B. V. Mill’ Yu. V. Pisarevskii D. F. Kondakov T. S. Chernaya I. A. Verin V. N. Molchanov V. I. Simonov |
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| Affiliation: | (1) Physics Faculty, Moscow State University, Vorob’evy gory, Moscow, 119992, Russia;(2) Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, Russia |
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| Abstract: | The complete X-ray structure determination of Czochralski grown La3Zr0.5Ga5Si0.5O14 single crystals with the Ca3Ga2Ge4O14 structure is performed (sp. gr. P321, a = 8.226(1) Å, c = 5.1374(6) Å, Z = 1, Mo Kα1 radiation, 1920 crystallographically independent reflections, R = 0.0166, Rw = 0.0192). The absolute structure is determined. It is shown that possible transition of some of La atoms (～1.2%) from the 3e to 6g position may give rise to the formation of structural defects. |
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