| 应变量子阱激光器阱宽与组分的确定和增益特性的理论研究 |
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| 引用本文： | 彭宇恒 陈维友. 应变量子阱激光器阱宽与组分的确定和增益特性的理论研究[J]. 光子学报, 1995, 24(6): 568-574 |
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| 作者姓名： | 彭宇恒 陈维友 |
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| 作者单位： | 吉林大学电子工程系，集成光电子学国家重点联合实验室吉林大学实验区 |
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| 摘 要： | 本文根据一维势阱和应变效应的简单理论,给出一种既简单又较准确的确定量子阱的组分和阱宽的方法。并且,针对较为常用的波长为1.3μm的InGaAs/InGaAsP材料以及最新兴起的InAsP/In材料应变量子阱激光器,利用该方法得到了组分和量子阱阱宽。再根据这些参数,利用变分法计算了量子阱的能带结构和二维电子气状态密度。然后,在选取不同的线形函数的情况下分别计算了对应于不同的注入载流予浓度时的这两种激光器的线性增益和微分增益。
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| 关 键 词： | 量子阱 二维电子气状态密度 线形函数 线性增益 微分增益 |
| 收稿时间： | 1994-08-22 |
THE DETERMINATION OF THE COMPOUND AND WELL-WIDTH AND THE THEORETICAL STUDIES OF GAIN CHARACTERISTICS OF THE STRAINED QUANTUM-WELL LASERS |
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| Peng Yuheng,Chen Weiyou,Zhao Tiemin,Liu Shiyong. THE DETERMINATION OF THE COMPOUND AND WELL-WIDTH AND THE THEORETICAL STUDIES OF GAIN CHARACTERISTICS OF THE STRAINED QUANTUM-WELL LASERS[J]. Acta Photonica Sinica, 1995, 24(6): 568-574 |
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| Authors: | Peng Yuheng Chen Weiyou Zhao Tiemin Liu Shiyong |
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| Affiliation: | Jilin University, National Integrated Optronics Laboralory, Changchun, China 130023 |
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| Abstract: | According to the simple theory of one-dimension potential well and strain eHect,a simpleand accurate method which determines the compound and quantum-well width is reported.Moreover,in view of the commonly-used InGaAs/InGaAsP and the newly prevailing InAsP/ InP strainedquantum-well lasers whose wave length is 1.3μm,we obtain the compound and quantum-well width bytaking advantages of this method.Then by means of the variational method,the band struture ofquantum-well and two dimension status of density are calculated on the basis of these parameters. Inaddition,taking different line shape functions,we calculate the linear and differential gain of the twolasers corresponding to the different carrier density. |
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| Keywords: | Quantum-well Two-dimension electron density Line shape function Linear gain Differential gain |
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