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Magnetism of Co layers in a Co/Si multilayer film |
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| Authors: | V O Vas’kovskiya G S Patrin D A Velikanov A V Svalov P A Savin A A Yuvchenko N N Shchegoleva |
| Institution: | (1) Ural State University, pr. Lenina 51, Yekaterinburg, 620083, Russia;(2) Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russia;(3) Institute of Metal Physics, Ural Division, Russian Academy of Sciences, ul. S. Kovalevskoĭ 18, Yekaterinburg, 620219, Russia |
| Abstract: | The magnetic properties of Co/Si multilayer films produced through rf ion sputtering were studied in the temperature range 4.2–300 K. The dependences of the spontaneous magnetization and hysteresis characteristics of the films on the thicknesses of the magnetic layers and nonmagnetic spacers are established. It is shown that these dependences are determined to a large extent by interlayer interfaces, in which the effective magnetic moment of the Co atoms and the exchange interaction decrease and magnetic-anisotropy dispersion arises. A probable cause of the interface formation is interlayer mixing (which is estimated to penetrate to a depth of 15 Å) and the strong effect of Si on the Co electronic structure. |
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