Hg1—xCdxTe多层薄膜材料结构缺陷的透射电子显微镜测定

用透射电镜对Ｈｇ１－ｘＣｄＴｅ／ＣｄＴｅ和ＣｄＴｅ／ＧａＡｓ两种异质结的横截面进行了观测分析，对异质结附近的某些结构缺陷，如微孪晶的尺寸，几何形态、层错、界面失配位错的组态特征进行了研究，并对多层膜之间的取向差进行了分析，说明在ＧａＡｓ衬底上用分子束外延法制备的Ｈｇ１－ｘＣｄｘＴｅ／ＣｄＴｅ／ＧａＡｓ多层膜，就大量结构缺陷而言，ＣｄＴｅ缓冲层对Ｈｇ１－ｘＣｄｘＴｅ外延层起到了屏障作用，在Ｈｇ１－ｘ

Determination of Structure Defects in Hg 1-x Cd xTe Multilayer by TEM

Structure defects at heterojunction regions, such as microtwins, stacking faults, mismatch dislocations, and misorientations between multilayer structures in Hg 1-x Cd xTe/CdTe and CdTe/GaAs, were studied by TEM (transmission electron microscopy). As to the heterojunctions of Hg 1-x Cd xTe/CdTe/GaAs multilayers grown by MBE(molecular beam epitaxy) method, it is well known that for most of structure defects, the buffer layer CdTe acts as an effective barrier for Hg 1-x Cd xTeepilayer. and the misorientations between Hg 1-x Cd xTe/CdTe and CdTe/GaAs were found that the more orienation difference exist the more lattice mismatches. Interaction between stacking fault and microtwin in buffer layer CdTe is also discussed.