| 反应溅射法制备氮化铝薄膜及工作气压对其场发射性能的影响 |
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| 引用本文： | 李松玲,王如志,赵维,王波,严辉.反应溅射法制备氮化铝薄膜及工作气压对其场发射性能的影响[J].液晶与显示,2010,25(6). |
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| 作者姓名： | 李松玲 王如志 赵维 王波 严辉 |
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| 作者单位： | 北京工业大学材料科学与工程学院; |
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| 基金项目： | 国家自然科学基金，北京市学术创新团队建设计划，北京市科技新星计划，北京市自然科学基金，教育部留学回国人员科研启动基金 |
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| 摘 要： | 采用反应磁控溅射法在不同工作气压(0.5～2.0Pa)下沉积了一系列氮化铝(AlN)薄膜。研究发现,在保持其他工艺参数不变的条件下,工作气压对薄膜厚度的影响很小。场发射性能测试表明,在较低的工作气压(0.5Pa和0.7Pa)下制备的AlN薄膜具有一定的场发射性能。扫描电子显微镜(SEM)图像显示,在较高的工作气压(2.0Pa)下制备的薄膜易产生空位及微空洞等缺陷,使薄膜致密性下降。电子在薄膜中的输运因受到缺陷的散射而不能隧穿表面势垒进行发射。研究表明,为获得具有良好场发射性能的AlN薄膜,若采用反应磁控溅射法,应选取较低的工作气压;同时,对于薄膜型阴极,具有紧密晶粒结构及较小缺陷的薄膜可能具有更优异的场发射性能。
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| 关 键 词： | 氮化铝薄膜 场发射 工作气压 缺陷 |
Effects of Pressure on Field Emission Characteristics of AIN Thin Films Prepared by RF Reactive Magnetron Sputtering |
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| LI Song-ling,WANG Ru-zhi,ZHAO Wei,WANG Bo,YAN Hui.Effects of Pressure on Field Emission Characteristics of AIN Thin Films Prepared by RF Reactive Magnetron Sputtering[J].Chinese Journal of Liquid Crystals and Displays,2010,25(6). |
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| Authors: | LI Song-ling WANG Ru-zhi ZHAO Wei WANG Bo YAN Hui |
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| Institution: | LI Song-ling,WANG Ru-zhi,ZHAO Wei,WANG Bo,YAN Hui (College of Materials Science and Engineering,Beijing University of Technology,Beijing 100124,China) |
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| Abstract: | Aluminum nitride (AlN) thin films were prepared by radio frequency (RF) reactive magnetron sputtering at the pressure ranging from 0.5 Pa to 2.0 Pa.Keeping the invariant process parameters,the thickness of the films changed very small by changing the working pressure.The field emission (FE) measurement showed that the FE current can be observed only for these films prepared under the lower work pressure 0.5 Pa and 0.7 Pa.The scanning electron microscope (SEM) images showed that the films prepared with highe... |
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| Keywords: | AlN films field emission working pressure defects |
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