| 含铜铁电电容器SrRuO3/Pb(Zr0.4Ti0.6)O3/SrRuO3/Ni-Al/Cu/Ni-Al/SiO2/Si异质结的研究 |
| |
| 引用本文： | 陈剑辉,刘保亭,赵庆勋,崔永亮,赵冬月,郭哲. 含铜铁电电容器SrRuO3/Pb(Zr0.4Ti0.6)O3/SrRuO3/Ni-Al/Cu/Ni-Al/SiO2/Si异质结的研究[J]. 物理学报, 2011, 60(11): 117701-117701. DOI: 10.7498/aps.60.117701 |
| |
| 作者姓名： | 陈剑辉 刘保亭 赵庆勋 崔永亮 赵冬月 郭哲 |
| |
| 作者单位： | 河北大学物理科学与技术学院,保定 071002 |
| |
| 基金项目： | 国家自然科学基金(批准号: 60876055,11074063)、河北省自然科学基金(批准号: E2008000620,E2009000207)、河北省应用基础研究计划重点基础研究(批准号:10963525D)和高等学校博士点基金(批准号: 20091301110002)资助的课题. |
| |
| 摘 要： | 应用磁控溅射法以Ni-Al同时作为Cu与SiO2/Si,Cu与SRO薄膜之间的阻挡层材料,将Cu与SiO2/Si衬底和氧化物薄膜电极隔离,避免它们在高温氧气氛中发生化学反应和互扩散,实现了Cu薄膜与氧化物铁电电容器的集成.采用X射线衍射仪(XRD)和原子力显微镜(AFM)研究了不同温度下快速退火的SrRuO3(SRO)/Ni-Al/Cu/Ni-Al/SiO2/Si含Cu异质结的微结构和表面形貌,结果发现SRO/Ni-Al/Cu/Ni-Al/SiO2/Si含Cu多层异质结薄膜在高达750 ℃仍然具有较强的Cu衍射峰和比较平整的表面,显示出了很好的高温热稳定性.研究了"室温长高温退"和"低温长高温退"两种工艺手段,发现在制备含Cu多层氧化物薄膜异质结时,低温长高温后退火的方式要优于常规的室温长高温后退火方式,通过低温长高温退工艺可以缓解应力、削弱界面粗化和避免高温生长对阻挡层和Cu薄膜结构的破坏.最后结合sol-gel法将Pb(Zr0.4Ti0.6)O3(PZT)生长在该含Cu异质结上,制备得SRO/PZT/SRO/Ni-Al/Cu/Ni-Al/SiO2/Si含Cu铁电电容器,研究了电容器的薄膜结构、铁电性能和漏电特性等,发现制备的含Cu铁电电容器具有很好的铁电性能,如电滞回线趋势饱和,剩余极化强度高达~42 μC/cm2,矫顽电压为~1.0 V,介电常数~1600,漏电流~1.83×10-4 A/cm2,以及良好的抗疲劳特性和保持特性等,表明导电性优良的Cu薄膜可以应用于高密度高性能铁电电容器.对其漏电机理研究表明,SRO/PZT/SRO含Cu铁电电容器满足空间电荷限制传导机理.关键词：CuPZT铁电电容器Ni-Al
|
| 关 键 词： | Cu PZT 铁电电容器 Ni-Al |
| 收稿时间： | 2011-01-20 |
| 修稿时间： | 2011-03-06 |
Integration of SRO/PZT/SRO/Ni-Al/Cu/Ni-Al/SiO2/Si ferroelectric capacitor with copper |
| |
| Chen Jian-Hui,Liu Bao-Ting,Zhao Qing-Xun,Cui Yong-Liang,Zhao Dong-Yue and Guo Zhe. Integration of SRO/PZT/SRO/Ni-Al/Cu/Ni-Al/SiO2/Si ferroelectric capacitor with copper[J]. Acta Physica Sinica, 2011, 60(11): 117701-117701. DOI: 10.7498/aps.60.117701 |
| |
| Authors: | Chen Jian-Hui Liu Bao-Ting Zhao Qing-Xun Cui Yong-Liang Zhao Dong-Yue Guo Zhe |
| |
| Affiliation: | College of Physics Science and Technology, Hebei University, Baoding 071002, China;College of Physics Science and Technology, Hebei University, Baoding 071002, China;College of Physics Science and Technology, Hebei University, Baoding 071002, China;College of Physics Science and Technology, Hebei University, Baoding 071002, China;College of Physics Science and Technology, Hebei University, Baoding 071002, China;College of Physics Science and Technology, Hebei University, Baoding 071002, China |
| |
| Abstract: | To integrate ferroelectric capacitor with copper thin film,SRO/Ni-Al/Cu/Ni-Al/SiO2/Si stack is fabricated by magnetron sputtering with Ni-Al as the barriers between Cu and SiO2/Si and between Cu and SRO simultaneously in order to segregate Cu from its adjacent oxide layers for avoiding interdiffusions/reactions when samples are annealed at a high temperature.XRD and AFM are employed to study microstructure and surface morphology respectively.The Cu diffraction peaks and the uniform surfaces are found in SRO... |
| |
| Keywords: | copper PZT ferroelectric capacitor Ni-Al |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
|
点击此处可从《物理学报》下载免费的PDF全文 |
|
