Exciton luminescence in In0.3Ga0.7As/GaAs quantum well heterostructures |
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| Authors: | N Syrbu A Dorogan N Dragutan T Vieru V Ursaki |
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| Institution: | aTechnical University of Moldova, 168 Stefan cel Mare Avenue, 2004 Chisinau, Republic of Moldova;bInstitute of Applied Physics, Academy of Sciences of Moldova, 5 Academy Street, 2028 Chisinau, Republic of Moldova |
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| Abstract: | Emission maxima related to the recombination of excitons (e1–hh1, e1–lh1, e2–hh2, and e2–lh2) were observed in photoluminescence spectra of GaAs/In0.3Ga0.7As/GaAs quantum wells. The emission bands due to e1–hh1 and e1–lh1 transitions were found to have a doublet character explained by the exchange interaction of excitons in quantum wells. Emission bands due to radiative Eb–hh1, Eb–lh1 transitions in the buffer GaAs layer are observed in the region of 1.5 eV. |
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