| In_xGa_（1－x）As缓冲层上In_yGa_（1－y）As／（Al）Ga |
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| 引用本文： | 王小军,刘伟,胡雄伟,王启明,黄美纯.In_xGa_（1－x）As缓冲层上In_yGa_（1－y）As／（Al）Ga[J].光子学报,1996(12). |
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| 作者姓名： | 王小军 刘伟 胡雄伟 王启明 黄美纯 |
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| 作者单位： | 国家光电子工艺中心，中国科学院半导体研究所，厦门大学物理系 |
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| 摘 要： | 本文中，发现在Ｉｎ＿ｘＧａ＿(１－ｘ)Ａｓ缓冲层上非故意掺杂的ＩｎｙＧａ＿(１－ｙ)Ａｓ／（Ａｌ）ＧａＡｓ超晶格样品中存在着两个互相反向的自建电场区，一个位于样品表面，另一个位于Ｉｎ＿ｘＧａ＿(１－ｘ)Ａｓ缓冲层和超晶格界面．据此，合理地解释了样品的光伏测试结果，并对此类样品的ＭＯＣＶＤ生长工艺给予指导．
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| 关 键 词： | 光伏测量 MOCVD InGaAs应变量子阱 |
THE PHOTOVOLTAIC MEASUREMENTS OF InyGa1-yAs/GaAs SUPEKLATTICES ON InxGa1-xAs BUFFER LAYER |
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| Wang Xiaojun,Liu Wei,Hu Xiongwei,Wang Qiming.THE PHOTOVOLTAIC MEASUREMENTS OF InyGa1-yAs/GaAs SUPEKLATTICES ON InxGa1-xAs BUFFER LAYER[J].Acta Photonica Sinica,1996(12). |
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| Authors: | Wang Xiaojun Liu Wei Hu Xiongwei Wang Qiming |
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| Abstract: | It is found that there are two intrinsic electric field regions in samples of InyGa1-yAs/GaAssuperlattices on InxGa1-xAs buffer layer.The electric field in these two regions, with one locating atthe surface and another locating at the interface between the InyGa1-yAs /GaAs superlattices and theInxGa1-x As buffer layer,has contrary direction each other. Based on this model,we can give a goodexplanation to the photovoltaic spectra of these samples. |
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| Keywords: | Photovoltaic measurement MOCVD InGaAs/GaAs strained quantum well |
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