Improvement of 1.3-μm GaInNAs Vertical Cavity Surface Emitting Lasers Grown by MOVPE |
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作者姓名: | 岳爱文 沈坤 石兢 王任凡 |
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作者单位: | [1]DepartmentofPhysics,WuhanUniversity,Wuhan430072 [2]WuhanTelecommunicationDevicesCo.,Wuhan430074 [3]InternationalCenterforMaterialPhysics,ChineseAcademyofSciences,Shenyang110016 |
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摘 要: | We report the improved performance of the conventional contact 1.3 #m GalnNAs vertical cavity surface emitting lasers (VCSELs) grown by metal-organic vapour-phase epitaxy (MOVPE). A new wet etching approach was applied in the fabrication of 1.3μm GaInNAs oxide-confined VCSELs. The threshold current of single mode device is 1.0mA. The multiple mode devices show very low threshold currents below 2 mA at 5-85℃, which were the best results for 1.3μm GaInNAs VCSELs reported. Maximum single mode output power of 0.256mW and the maximum multiple mode power of 0.883mW were obtained at room temperature.
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关 键 词: | 砷氮铟镓 垂直腔表面发射激光器 MOVPE VCSELs 半导体材料 量子点 量子阱 |
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