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Photoemission studies of Cu intercalated NbSe2
Authors:YY Koh  WS Jung  SR Park  Chul Kim  WS Kyung  LX Yang  F Chen  C Kim
Institution:a Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
b Department of Physics, Surface Physics Laboratory (National Key Laboratory) and Advanced Materials Laboratory, Fudan University, Shanghai 200433, PR China
Abstract:We report growth and angle resolved photoemission studies of Cu intercalated NbSe2. CuxNbSe2 with x=0, 0.04 and 0.08 were grown by iodine vapor transport method. Intercalation and doping was confirmed by the change in the c-axis lattice constant and the change in the electronic structure, respectively. To investigate the nesting condition, we performed auto-correlation analysis on the data. We find that the magnitude of the nesting vector decreases with doping but the direction remains unchanged. Our observation is consistent with the nesting coming from intra-pocket transition.
Keywords:A  Chalcogenides  C  Photoelectron spectroscopy  D  Charge-density waves  D  Electronic structures
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