SiO2 films fabricated by F2 laser-induced chemical deposition using silicone rubber

Silicon dioxide (SiO₂) films were selectively fabricated on a Si substrate at room temperature by illuminating both the silicone rubber target and the substrate with an F₂ laser (157 nm). The laser fluence was much less than the ablation threshold. Absorption due to absorbed water (H₂O) and hydrogen-bonded silanol (SiOH) groups were observed in addition to absorption due to Si-O-Si stretching mode in the Fourier transform infrared spectroscopy (FT-IR) spectra of the films. The illumination with higher laser fluence caused an increase of Si-O-Si/OH peak ratio in the FT-IR spectra, a decrease of etching rate in hydrofluoric acid (HF) solution, and an increase in the refractive index close to the value of a thermal SiO₂ film. These results indicate that the quality of the grown SiO₂ films was improved. The high photon energy of F₂ laser induced photodissociation of main chains and side chains of silicone and oxygen (O₂), and bonds between the ejected gaseous molecules including Si and O(¹D) to form SiO₂ films. PACS 61.80.Ba; 81.15.Fg; 82.50.Hp