Microwave complementary doped-channel field-effect transistors |
| |
Authors: | Jung-Hui Tsai Shao-Yen Chiu Wen-Shiung Lour Wen-Chau Liu Chien-Ming Li Ning-Xing Su Yi-Zhen Wu Yin-Shan Huang |
| |
Affiliation: | 1. Department of Electronic Engineering, National Kaohsiung Normal University, 116, Ho-ping 1st Road, Kaohsiung, Taiwan;2. Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung, Taiwan;3. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan;4. Department of Physics, National Kaohsiung Normal University, 116, Ho-ping 1st Road, Kaohsiung, Taiwan |
| |
Abstract: | In this paper, the device performance and complementary inverter of the InGaP/InGaAs/GaAs doped-channel field-effect transistors (DCFETs) by two-dimensional semiconductor simulation are demonstrated. Due to the relatively large conduction (valance) band discontinuity at InGaP/InGaAs interface, it provides good confinement effect for transporting carriers in InGaAs channel layer for the n-channel (p-channel) device. The large gate turn-on voltage is achieved due to the employment of the wide energy-gap InGaP material as gate layer. The ft and fmax are of 6.5 (2.1) and 25 (5) GHz for the n-channel (p-channel) device. Furthermore, the co-integrated structures, by the combination of n- and p-channel field-effect transistors, could form a complementary inverter and the relatively large noise margins are achieved. |
| |
Keywords: | Complementary Inverter InGaP/InGaAs/GaAs Doped-channel Field-effect transistors Confinement effect Noise margin |
本文献已被 ScienceDirect 等数据库收录! |
|