|
|||||
|
|
A simple estimate of deposited energy and concentration profiles in films produced by Ion-Assisted Physical Vapour Deposition |
|
| Authors: | K. G. Grigorov D. Bouchier G. I. Grigorov J-L Vignes J-P Langeron |
| Affiliation: | (1) Institut d'Electronique Fondamentale, URA CNRS, Université Paris-Sud, Bât. 220, F-91405 Orsay Cedex, France;(2) CECM/CNRS, 15, rue G. Urbain, F-94400 Vitry-sur-Seine, France;(3) Present address: Institute of Electronics BAS, 72 Blvd. Tzarigradsko Chaussee, 1784 Sofia, Bulgaria |
| Abstract: | Analytical expressions for estimating the energy dissipation and the film constituent concentration profiles in films grown by Ion-Assisted Physical Vapour Deposition (IA PVD) are given. Two cases of IA PVD are considered: ion-assistance performed by inert-gas ions as well as by ions of a film constituent. As an example of application, concentration and damage depth profiles in h-BN films grown by IA PVD are calculated and a comparison is made with results obtained by computer simulation. |
| Keywords: | 68.55 81.15 81.40 |
| 本文献已被 SpringerLink 等数据库收录！ | |