Structural and electrical characteristics of ALD-HfO2/n-Si gate stack with SiON interfacial layer for advanced CMOS technology |
| |
| Institution: | 1. University of Florida, Department of Electrical and Computer Engineering, Gainesville, Florida, 32611, USA;2. University of Florida, Department of Materials Science and Engineering, Gainesville, Florida, 32611, USA;3. University of Florida, Department of Mechanical and Aerospace Engineering, Gainesville, Florida, 3261, USA |
| |
| Abstract: | We report the fabrication of an ultra-thin silicon oxynitride (SiON) as an interfacial layer (IL) for n-Si/ALD-HfO2 gate stack with reduced leakage current. The XRD, AFM, FTIR, FESEM and EDAX characterizations have been performed for structural and morphological studies. Electrical parameters such as dielectric constant (K), interface trap density (Dit), leakage current density (J), effective oxide charge (Qeff), barrier height (Φbo), ideality factor (?), breakdown-voltage (Vbr) and series resistance (Rs) were extracted through C-V, G-V and I-V measurements. The determined values of K, Dit, J, Qeff, Φbo, ?, Vbr and Rs are 14.4, 0.5 × 10 11 eV?1 cm?2, 2.2 × 10?9 A/cm2, 0.3 × 1013 cm?2, 0.42, 2.1, ?0.33 and 14.5 MΩ respectively. SiON growth prior to HfO2 deposition has curtailed the problem of high leakage current density and interfacial traps due to sufficient amount of N2 incorporated at the interface. |
| |
| Keywords: | High-k dielectrics Interfacial layer (IL) FTIR Dit and ideality factor |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
