Synthesis of Ni-poor NiO nanoparticles for p-DSSC applications |
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| Affiliation: | 1. Institute of Electrochemistry, University of Alicante, 03690 San Vicente del Raspeig, Alicante, Spain;2. Physical Chemistry Department, University of Alicante, 03690 San Vicente del Raspeig, Alicante, Spain;3. Faculty of Science and Engineering, Manchester Metropolitan University, Chester Street, Manchester M1 5GD, UK |
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| Abstract: | To improve the performances of p-Dye Sensitized Solar Cell (p-DSSC) for the future, the synthesis of modified p-type nickel oxide semiconductor, commonly used as photocathode in such devices, was initiated with Ni3O2(OH)4 as precursor. This specific nickel oxyhydroxide was first characterized by X-ray photo-electron spectroscopy and magnetic susceptibility measurements. Then its thermal decomposition was thoroughly studied in order to control the particles size of the as-prepared NiO nanopowders. Low temperature decomposition in air of this precursor allows the formation of Ni1−xO nanoparticles with a large amount of Ni vacancies and specific surface areas up to 250 m2 g−1. Its ammonolysis at 250 °C leads to nanostructured N-doped NiO (NiO:N) materials. |
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| Keywords: | Synthesis Ni-poor NiO Nitrogen doping Nanoparticles |
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